SI4565ADY-T1-E3 Datasheet, PDF (8/15 Pages) Vishay Siliconix – N- and P-Channel 40-V (D-S) MOSFET

Si4565ADY
Vishay Siliconix
P-CHANNEL TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
20
20
V_GS = 10 thru 4 V
16
16
12
3V
8
4
0
0
1
2
3
4
5
V_DS – Drain-to-Source Voltage (V)
Output Characteristics
0.08
12
8
T_C = 125 °C
4
25 °C
- 55 °C
0
0.0
0.8
1.6
2.4
3.2
4.0
V_GS – Gate-to-Source Voltage (V)
Transfer Characteristics
1240
0.07
0.06
V_GS = 4.5 V
992
C_iss
744
0.05
0.04
V_GS = 10 V
0.03
0
4
8
12
16
20
I_D – Drain Current (A)
On-Resistance vs. Drain Current and Gate Voltage
10
I_D = 4.5 A
8
V_DS = 10 V
6
V_DS = 20 V
4
2
0
0
5
10
15
20
Q_g – Total Gate Charge (nC)
Gate Charge
496
248
C_rss
0
0
8
C_oss
16
24
32
40
V_DS – Drain-to-Source Voltage (V)
Capacitance
1.8
1.6
1.4
1.2
1.0
0.8
0.6
- 50 - 25 0
25 50 75 100 125 150
T_J – Junction Temperature (°C)
On-Resistance vs. Junction Temperature
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8
Document Number: 73880
S09-0393-Rev. B, 09-Mar-09