VS-GT300YH120N Datasheet, PDF (8/10 Pages) Vishay Siliconix – DIAP Trench IGBT Power Module - 1200 V, 300 A Current Fed Inverter Topology

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1
VS-GT300YH120N
Vishay Semiconductors
0.1
D = 0.50
D = 0.20
D = 0.10
D = 0.05
0.01
D = 0.02
D = 0.01
DC
0.001
0.0001
0.001
0.01
0.1
1
10
t₁ - Rectangular Pulse Duration (s)
Fig. 24 - Maximum Thermal Impedance Z_thJC Characteristics Series Diode
CIRCUIT CONFIGURATION
11
6
7
1
2
3
9
5
4
ORDERING INFORMATION TABLE
Device code _{VS- G T 300 Y H 120 N}
1
2
3
4
5
6
7
8
1 ^{- Vishay Semiconductors product}
2 - Insulated Gate Bipolar Transistor (IGBT)
3 - T = Trench IGBT technology
4 - Current rating (300 = 300 A)
5 - Y = Current Fed Inverter
6 - Package indicator (Double INT-A-PAK)
7 - Voltage rating (120 = 1200 V)
8 - N = Ultrafast
Revision: 12-Jun-15
8
Document Number: 94681
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