VS-GT300YH120N Datasheet, PDF (7/10 Pages) Vishay Siliconix – DIAP Trench IGBT Power Module - 1200 V, 300 A Current Fed Inverter Topology

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VS-GT300YH120N
Vishay Semiconductors
6000
5000
4000
40 A, T_J = 125 °C
10 A, T_J = 125 °C
3000
2000
1000
0
100
10 A, T_J = 25 °C ^{40 A, TJ = 25 °C}
200
300
400
500
di_F/dt (A/μs)
Fig. 19 - Typical Q_rr Antiparallel Diode vs. di_F/dt, V_rr = 400 V
600
550
500
T_J = 125 °C
450
400
350
300
250
T_J = 25 °C
200
100
200
300
400
500
di_F/dt (A/μs)
Fig. 20 - Typical t_rr Series Diode vs. di_F/dt, V_rr = 400 V, I_F = 50 A
1
50
40
T_J = 125 °C
30
20
T_J = 25 °C
10
0
100
200
300
400
500
di_F/dt (A/μs)
Fig. 21 - Typical I_rr Chopper Diode vs. di_F/dt, V_rr = 400 V, I_F = 50 A
10 000
9000
8000
7000
T_J = 125 °C
6000
5000
4000
3000
2000
T_J = 25 °C
1000
100
200
300
400
500
di_F/dt (A/μs)
Fig. 22 - Typical Q_rr Chopper Diode vs. di_F/dt, V_rr = 400 V, I_F = 40 A
0.1
0.01
0.001
D = 0.50
D = ^0..20
D = 0.10
D = 0.05
D = 0.02
D = 0.01
DC
0.0001
0.00001
0.0001
0.001
0.01
0.1
1
10
t₁ - Rectangular Pulse Duration (s)
Fig. 23 - Maximum Thermal Impedance Z_thJC Characteristics IGBT
Revision: 12-Jun-15
7
Document Number: 94681
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