VS-GT300YH120N Datasheet, PDF (5/10 Pages) Vishay Siliconix – DIAP Trench IGBT Power Module - 1200 V, 300 A Current Fed Inverter Topology

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6
T_J = 25 °C
5
4
T_J = 125 °C
3
2
0
2
4
6
8
10 12 14
I_C (mA)
Fig. 7 - Typical IGBT Gate Threshold Voltage
160.00
140.00
120.00
100.00
80.00
60.00
40.00
20.00
0.00
0
50 100 150 200 250 300 350 400
I_F - Continuous Forward Current (A)
Fig. 8 - Maximum Continuous Forward Current vs.
Case Temperature Series Diode
600
550
500
450
T_J = 150 °C
400
350
300
T_J = 125 °C
250
200
150
100
50
T_J = 25 °C
0
0.25 0.5 0.75 1 1.25 1.5 1.75 2 2.25 2.5 2.75 3
V_FM - Forward Voltage Drop (V)
Fig. 9 - Typical Series Diode Forward Voltage
VS-GT300YH120N
Vishay Semiconductors
160.00
140.00
120.00
100.00
80.00
60.00
40.00
20.00
0.00
0
10
20
30
40
50
60
I_F - Continuous Forward Current (A)
Fig. 10 - Maximum Continuous Forward Current vs.
Case Temperature Antiparallel Diode
100
90
80
70
60
T_J = 25 °C
50
40
T_J = 150 °C
30
20
10
T_J = 125 °C
0
0.5 1 1.5 2 2.5 3 3.5 4
V_F - Anode to Cathode Forward Voltage Drop (V)
Fig. 11 - Typical Diode Forward Voltage Characteristics of
Antiparallel Diode t_p = 500 μs
100
T_J = 150 °C
10
1
T_J = 125 °C
0.1
0.01
0.001
T_J = 25 °C
0.0001
100 200 300 400 500 600 700 800 900 10001100 1200
V_R (V)
Fig. 12 - Typical Series Diode Leakage Current vs. Reverse Voltage
Revision: 12-Jun-15
5
Document Number: 94681
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