VS-GT300YH120N Datasheet, PDF (4/10 Pages) Vishay Siliconix – DIAP Trench IGBT Power Module - 1200 V, 300 A Current Fed Inverter Topology

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160
140
120
100
80
60
40
20
0
0 50 100 150 200 250 300 350 400
I_C - Continuous Collector Current IGBT (A)
Fig. 1 - Maximum IGBT Continuous Collector Current vs.
Case Temperature
600
V_GE = 18 V
500 ^{VGE = 15 V}
V_GE = 12 V
400 _{VGE = 9 V}
300
200
100
0
0
1
2
3
4
5
V_CE (V)
Fig. 2 - Typical IGBT Output Characteristics, T_J = 25 °C
600
V_GE = 18 V
500 ^{VGE = 15 V}
V_GE = 12 V
400 _{VGE = 9 V}
300
200
100
0
0
1
2
3
4
5
V_CE (V)
Fig. 3 - Typical IGBT Output Characteristics, T_J = 125 °C
VS-GT300YH120N
Vishay Semiconductors
600
V_GE = 18 V
500 ^{VGE = 15 V}
V_GE = 12 V
400 _{VGE = 9 V}
300
200
100
0
0
1
2
3
4
5
V_CE (V)
Fig. 4 - Typical IGBT Output Characteristics, T_J = 150 °C
250
T_J = 125 °C
200
T_J = 25 °C
150
100
50
0
4
5
6
7
8
9
10
V_GE (V)
Fig. 5 - Typical IGBT Transfer Characteristics
100
T_J = 150 °C
10
1
T_J = 125 °C
0.1
0.01
0.001
T_J = 25 °C
0.0001
100 200 300 400 500 600 700 800 900 1000 11001200
V_CES (V)
Fig. 6 - Typical IGBT Zero Gate Voltage Collector Current
Revision: 12-Jun-15
4
Document Number: 94681
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