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VS-GT300YH120N Datasheet, PDF (2/10 Pages) Vishay Siliconix – DIAP Trench IGBT Power Module - 1200 V, 300 A Current Fed Inverter Topology
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VS-GT300YH120N
Vishay Semiconductors
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C unless otherwise noted)
ANTPARALLEL DIODE
Continuous forward current
Peak repetitive forward current
Maximum power dissipation
MODULE
IF (1)
IFSM
PD
TC = 80 °C
TC = 25 °C
TC = 80 °C
TC = 25 °C
36
A
51
n/a
A
77
W
137
RMS isolation voltage
VISOL
f = 50 Hz, t = 1 minute
4000
V
Junction temperature range
Storage temperature range
TJ
TSTG
-40 to +150
°C
-40 to +150
Note
(1) Max. RMS current admitted for the terminals 10 A
ELECTRICAL SPECIFICATIONS (TC = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
TEST CONDITIONS
IGBT
Collector to emitter breakdown voltage
Collector to emitter saturation voltage
Gate to emitter threshold voltage
Collector to emitter leakage current
Gate to emitter leakage current
SERIES DIODE
V(BR)CES
VCE(on)
VGE(th)
ICES
IGES
VGE = 0 V, IC = 0.5 mA, TJ = 25 °C
VGE = 15 V, IC = 300 A, TJ = 25 °C
VGE = 15 V, IC = 300 A, TJ = 125 °C
VCE = VGE, IC = 14 mA, TJ = 25 °C
VGE = 0 V, VCE = 1200 V
VGE = 0 V, VCE = 1200 V, TJ = 125 °C
VGE = ± 30 V
Cathode to anode breakdown voltage
Cathode to anode leakage current
Forward voltage
ANTIPARALLEL DIODE
VR
IC = 1.0 mA, TJ = 125 °C
VR = 1200 V
IR
VR = 1200 V, TJ = 125 °C
IF = 300 A
VF
IF = 300 A, TJ = 125 °C
Forward voltage
IGBT AND HEXFRED® SERIES DIODE
Collector to emitter saturation voltage +
Forward voltage
IF = 10 A
VF
IF = 10 A, TJ = 125 °C
VCE(on) + VF IC = 300 A
MIN. TYP. MAX. UNITS
1200
-
-
-
2.17
-
V
-
2.4
-
4.7
5.6
7.8
-
0.003 0.3
mA
-
1.03
-
-
-
400
nA
1200
-
-
-
0.003 0.2
mA
-
3.5
-
-
1.99
-
V
-
2.02
-
-
1.6
-
V
-
1.4
-
-
4.12 4.65
V
Revision: 12-Jun-15
2
Document Number: 94681
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