VS-GT300YH120N Datasheet, PDF (6/10 Pages) Vishay Siliconix – DIAP Trench IGBT Power Module - 1200 V, 300 A Current Fed Inverter Topology

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40
V_CC = 600 V
R_g = 4.7 Ω
30
V_GE = 15 V
L = 500 μH
20
E_on
E_off
10
0
0 50 100 150 200 250 300 350
Ic (A)
Fig. 13 - Typical IGBT Energy Loss vs. I_C, T_J = 125 °C -
Freewheeling Diode VS-H3195D12A6B in TO-247 Package
140
V_CC = 600 V
120
I_C = 300 A
V_GE = 15 V
L = 500 μH
100
E_on
80
60
40
E_off
20
0
10
20
30
40
R_g (Ω)
Fig. 14 - Typical IGBT Energy Loss vs. R_g, T_J = 125 °C -
Freewheeling Diode VS-H3195D12A6B in TO-247 Package
10 000
1000
V_CC = 600 V
R_g = 4.7 Ω
V_GE = 15 V
L = 500 μH
100
t_d(off)
t_d(on)
t_r
t_f
10
0
50 100 150 200 250 300 350
Ic (A)
Fig. 15 - Typical IGBT Switching Time vs. I_C, T_J = 125 °C -
Freewheeling Diode VS-H3195D12A6B in TO-247 Package
VS-GT300YH120N
Vishay Semiconductors
10 000
1000
t_r
100
t_d(off)
t_d(on)
t_f
10
0
10
20
30
R_g (Ω)
Fig. 16 - Typical IGBT Switching Time vs. R_g,
T_J = 125 °C, I_C = 100 A, V_CE = 360 V, V_GE = 15 V, L = 500 μH
500
450
10 A, T_J = 25 °C
400
10 A, T_J = 125 °C
350
40 A, T_J = 25 °C
40 A, T_J = 125 °C
300
250
200
150
100
200
300
400
500
di_F/dt (A/μs)
Fig. 17 - Typical t_rr Antiparallel Diode vs. di_F/dt, V_rr = 400 V
40
35
40 A, T_J = 125 °C
30 10 A, T_J = 125 °C
25
20
15
10
5
100
10 A, T_J = 25 °C
200
300
40 A, T_J = 25 °C
400
500
di_F/dt (A/μs)
Fig. 18 - Typical I_rr Antiparallel Diode vs. di_F/dt, V_rr = 400 V
Revision: 12-Jun-15
6
Document Number: 94681
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