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VS-GT175DA120U Datasheet, PDF (8/10 Pages) Vishay Siliconix – Insulated Gate Bipolar Transistor (Trench IGBT), 175 A
www.vishay.com
ORDERING INFORMATION TABLE
VS-GT175DA120U
Vishay Semiconductors
Device code VS- G T 175 D A 120 U
1
2
3
4
5
6
7
8
1 - Vishay Semiconductors product
2 - Insulated Gate Bipolar Transistor (IGBT)
3 - Trench IGBT technology
4 - Current rating (175 = 175 A)
5 - Circuit configuration (D = Single switch with antiparallel diode)
6 - Package indicator (A = SOT-227)
7 - Voltage rating (120 = 1200 V)
8 - Speed/type (U = Ultrafast)
CIRCUIT CONFIGURATION
CIRCUIT
CIRCUIT
CONFIGURATION CODE
CIRCUIT DRAWING
3 (C)
Lead Assignment
4
3
Single switch diode
D
2 (G)
1
2
1, 4 (E)
Dimensions
Packaging information
LINKS TO RELATED DOCUMENTS
www.vishay.com/doc?95423
www.vishay.com/doc?95425
Revision: 31-May-16
8
Document Number: 93990
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000