VS-GT175DA120U Datasheet, PDF (3/10 Pages) Vishay Siliconix – Insulated Gate Bipolar Transistor (Trench IGBT), 175 A

www.vishay.com
VS-GT175DA120U
Vishay Semiconductors
THERMAL AND MECHANICAL SPECIFICATIONS
PARAMETER
SYMBOL
TEST CONDITIONS
Junction and storage temperature range
Junction to case
IGBT
Diode
T_J, T_Stg
R_thJC
Case to heatsink
Weight
R_thCS
Flat, greased surface
Mounting torque
Torque to terminal
Torque to heatsink
Case style
MIN.
-40
-
-
-
-
-
-
SOT-227
TYP.
-
-
-
0.05
30
-
-
MAX.
150
0.115
0.57
-
-
1.1 (9.7)
1.3 (11.5)
UNITS
°C
°C/W
g
Nm (lbf.in)
Nm (lbf.in)
160
140
120
DC
100
80
60
40
20
0
0 40 80 120 160 200 240 280 320
I_C - Continuous Collector Current (A)
Fig. 1 - Maximum DC IGBT Collector Current vs.
Case Temperature
300
275 ^VGE ^{= 15 V}
250
225
T_J = 125 °C
200
175
150
125
T_J = 25 °C
T_J = 150 °C
100
75
50
25
0
0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0
V_CE - Collector-to-Emitter Voltage (V)
Fig. 2 - Typical Collector to Emitter Current Output Characteristics
of IGBT
160
140
120
100
80
60
40
20
0
0 10 20 30 40 50 60 70 80
I_F - Continuous Forward Current (A)
Fig. 3 - Maximum Allowable Forward Current vs. Case Temperature
Diode Leg
200
T_J = 125 °C
160
120
T_J = 25 °C
80
T_J = 150 °C
40
0
0 1.0 2.0 3.0 4.0 5.0 6.0 7.0 8.0
V_F - Forward Voltage Drop Characteristics (V)
Fig. 4 - Typical Diode Forward Voltage Drop Characteristics
Revision: 31-May-16
3
Document Number: 93990
For technical questions within your region: [e-mail], [e-mail], [e-mail]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000