VS-GT175DA120U Datasheet, PDF (6/10 Pages) Vishay Siliconix – Insulated Gate Bipolar Transistor (Trench IGBT), 175 A

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1
VS-GT175DA120U
Vishay Semiconductors
0.1 _0.75
0.50
0.25
0.1
0.01 _0.05
0.02
DC
0.001
0.0001
0.001
0.01
P
DM
t
1
t
2
Notes:
1. Duty factor D = t₁/t₂
2. Peak T_J = P_DM x Z_thJC + T_C
0.1
1
10
Rectangular Pulse Duration (s)
Fig. 16 - Maximum Thermal Impedance Z_thJC Characteristics (IGBT)
1
0.1
0.01
0.75
0.50
0.25
0.1
0.05
0.02
DC
0.001
0.0001
0.001
0.01
P
DM
t
1
t
2
Notes:
1. Duty factor D = t₁/t₂
2. Peak T_J = P_DM x Z_thJC + T_C
0.1
1
10
Rectangular Pulse Duration (s)
Fig. 17 - Maximum Thermal Impedance Z_thJC Characteristics (Diode)
1000
100
10
1
0.1
0.01
1
10
100
1000
10 000
V_CE (V)
Fig. 18 - IGBT Reverse Bias SOA, T_J = 150 °C, V_GE = 15 V
Revision: 31-May-16
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Document Number: 93990
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