VS-GT175DA120U Datasheet, PDF (5/10 Pages) Vishay Siliconix – Insulated Gate Bipolar Transistor (Trench IGBT), 175 A

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VS-GT175DA120U
Vishay Semiconductors
40
35
E_on
30
25
20
15
E_off
10
5
0
0
10
20
30
40
50
R_g (Ω)
Fig. 11 - Typical IGBT Energy Losses vs. R_g
T_J = 125 °C, I_C = 100 A, L = 500 μH, V_CC = 720 V, V_GE = 15 V
Diode used: HFA16PB120
310
290
270
250
230
210
190
170
150
130
110
90
100
T_J = 25 °C
T_J = 125 °C
1000
dI_F/dt (A/μs)
Fig. 13 - Typical Reverse Recovery Time vs. dI_F/dt, of Diode,
at I_F = 50 A, V_R = 400 V
10000
3000
1000
t_d(off)
t_d(on)
t_f
100
t_r
2500
2000
1500
1000
500
T_J = 125 °C
T_J = 25 °C
10
0
10
20
30
40
50
R_g (Ω)
Fig. 12 - Typical IGBT Switching Time vs. R_g
T_J = 125 °C, L = 500 μH, V_CC = 720 V, I_C = 100 A, V_GE = 15 V
Diode used: HFA16PB120
0
100
1000
dI_F/dt (A/μs)
Fig. 14 - Typical Stored Charge vs. dI_F/dt of Diode,
at I_F = 50 A, V_R = 400 V
45
40
35
30
25
T_J = 125 °C
20
15
T_J = 25 °C
10
5
0
100
1000
dI_F/dt (A/μs)
Fig. 15 - Typical Reverse Recovery Current vs. dI_F/dt, of Diode,
at I_F = 50 A, V_R = 400 V
Revision: 31-May-16
5
Document Number: 93990
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