VS-GT175DA120U Datasheet, PDF (4/10 Pages) Vishay Siliconix – Insulated Gate Bipolar Transistor (Trench IGBT), 175 A

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VS-GT175DA120U
Vishay Semiconductors
140
120
100
80
60
T_J = 150 °C
40
T_J = 125 °C
20
T_J = 25 °C
0
4.5 5.0 5.5 6.0 6.5 7.0 7.5 8.0 8.5 9.0
V_GE - Gate-to-Emitter Voltage (V)
Fig. 5 - Typical IGBT Transfer Characteristics
2.4
2.2
I_C = 100 A
2.0
I_C = 80 A
1.8
I_C = 60 A
1.6
I_C = 40 A
1.4
1.2
1.0
0.8
0 20 40 60 80 100 120 140 160
T_J - Junction Temperature (°C)
Fig. 8 - Typical IGBT Collector to Emitter Voltage vs.
Junction Temperature, V_GE = 15 V
100
10
T_J = 150 °C
1
T_J = 125 °C
0.1
0.01
0.001
T_J = 25 °C
0.0001
0
200 400 600 800 1000 1200
V_CES - Collector-to-Emitter Voltage (V)
Fig. 6 - Typical IGBT Zero Gate Voltage Collector Current
6
5.5
T_J = 25 °C
5
4.5
4
T_J = 125 °C
3.5
3
2.5
2
0.20
0.40
0.60
0.80
1.00
I_C (mA)
Fig. 7 - Typical IGBT Threshold Voltage
12.0
11.0
10.0
E_off
9.0
8.0
7.0
6.0
E_on
5.0
4.0
3.0
2.0
1.0
0
10 20 30 40 50 60 70 80 90 100 110 120
I_C (A)
Fig. 9 - Typical IGBT Energy Losses vs. I_C
T_J = 125 °C, L = 500 μH, V_CC = 720 V, R_g = 2.2 , V_GE = 15 V
Diode used: HFA16PB120
1000
t_f
t_d(off)
t_d(on)
100
t_r
10
10 20 30 40 50 60 70 80 90 100 110 120
I_C (A)
Fig. 10 - Typical IGBT Switching Time vs. I_C
T_J = 125 °C, L = 500 μH, V_CC = 720 V, R_g = 2.2 , V_GE = 15 V
Diode used: HFA16PB120
Revision: 31-May-16
4
Document Number: 93990
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