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| VS-GT175DA120U Datasheet, PDF (2/10 Pages) Vishay Siliconix – Insulated Gate Bipolar Transistor (Trench IGBT), 175 A | |||
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www.vishay.com
VS-GT175DA120U
Vishay Semiconductors
ELECTRICAL SPECIFICATIONS (TJ = 25 °C unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
Collector to emitter breakdown voltage
Collector to emitter voltage
Gate threshold voltage
Temperature coefficient of threshold voltage
Collector to emitter leakage current
Forward voltage drop, diode
Gate to emitter leakage current
VBR(CES)
VCE(on)
VGE(th)
ïVGE(th)/ïTJ
ICES
VFM
IGES
VGE = 0 V, IC = 250 μA
VGE = 15 V, IC = 100 A
VGE = 15 V, IC = 100 A, TJ = 125 °C
VGE = 15 V, IC = 100 A, TJ = 150 °C
VCE = VGE, IC = 250 μA
VCE = VGE, IC = 7.5 mA
VCE = VGE, IC = 250 μA, TJ = 125 °C
VCE = VGE, IC = 1 mA (25 °C to 125 °C)
VGE = 0 V, VCE = 1200 V
VGE = 0 V, VCE = 1200 V, TJ = 125 °C
VGE = 0 V, VCE = 1200 V, TJ = 150 °C
IF = 40 A, VGE = 0 V
IF = 40 A, VGE = 0 V, TJ = 125 °C
IF = 40 A, VGE = 0 V, TJ = 150 °C
VGE = ± 20 V
MIN.
1200
-
-
-
-
4.9
-
-
-
-
-
-
-
-
-
TYP.
-
1.73
1.98
2.05
5
5.9
2.9
-17.6
0.9
0.85
4
3.12
3.15
3.25
-
MAX.
-
2.1
2.2
-
-
7.9
-
-
100
10
20
3.44
3.47
-
± 200
UNITS
V
mV/°C
μA
mA
V
nA
SWITCHING CHARACTERISTICS (TJ = 25 °C unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
Total gate charge (turn-on)
Gate to emitter charge (turn-on)
Gate to collector charge (turn-on)
Turn-on switching loss
Turn-off switching loss
Total switching loss
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Turn-on switching loss
Turn-off switching loss
Total switching loss
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Reverse bias safe operating area
Diode reverse recovery time
Diode peak reverse current
Diode recovery charge
Diode reverse recovery time
Diode peak reverse current
Diode recovery charge
Short circuit safe operating area
Qg
Qge
Qgc
Eon
Eoff
Etot
td(on)
tr
td(off)
tf
Eon
Eoff
Etot
td(on)
tr
td(off)
tf
RBSOA
trr
Irr
Qrr
trr
Irr
Qrr
SCSOA
IC = 150 A (tp < 400 μs, D < 2 %), ï
VCC = 600 V, VGE = 15 V
IC = 100 A, VCC = 720 V,
VGE = 15 V, Rg = 2.2 ïï¬ï
L = 500 μH, TJ = 25 °C
IC = 100 A, VCC = 720 V,
VGE = 15 V, Rg = 2.2 ïï¬ ï
L = 500 μH, TJ = 125 °C
Energy losses
include tail
and diode
recovery ï
Diode used
HFA16PB120
TJ = 150 °C, IC = 450 A, Rg = 4.7 ïï¬ï
VGE = 15 V to 0 V, VCC = 600 V,ï
VP = 1200 V, L = 500 μH
IF = 50 A, dIF/dt = 200 A/μs, VR = 400 V
IF = 50 A, dIF/dt = 200 A/μs, ï
VR = 400 V, TJ = 125 °C
TJ = 150 °C, Rg = 22 ï,ï
VGE = 15 V to 0 V, VCC = 900 V,ï
Vp = 1200 V
MIN.
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
TYP.
830
180
380
4.8
7.0
11.8
274
67
271
177
6.0
10.4
16.4
285
75
306
244
MAX.
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
UNITS
nC
mJ
ns
mJ
ns
Fullsquare
164
-
ns
12
-
A
994
-
nC
230
-
ns
16.5
-
A
1864
-
nC
10
μs
Revision: 31-May-16
2
Document Number: 93990
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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