SI5857DU Datasheet, PDF (8/10 Pages) Vishay Siliconix – P-Channel 20-V (D-S) MOSFET With Schottky Diode

Si5857DU
Vishay Siliconix
SCHOTTKY TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
100
10
10
1
20 V
0.1
T_J = 150 °C
T_J = 25 °C
1
0.01
0.001
10 V
0.0001
- 50 - 25 0
25 50 75 100 125 150
T_J - Junction Temperature (°C)
Reverse Current vs. Junction Temperature
0.1
0
0.1
0.2
0.3
0.4
0.5 0.6
V_F - Forward Voltage Drop (V)
Forward Voltage Drop
600
500
400
300
200
100
0
0
4
8
12
16
20
V_KA - Reverse Voltage (V)
Capacitance
www.vishay.com
8
Document Number: 73696
S-81449-Rev. C, 23-Jun-08