SI5857DU Datasheet, PDF (4/10 Pages) Vishay Siliconix – P-Channel 20-V (D-S) MOSFET With Schottky Diode

Si5857DU
Vishay Siliconix
MOSFET TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
20
5
V_GS = 5 V
V_GS = 3.5 V
V_GS = 4.5 V
16
V_GS = 4 V
V_GS = 3 V
4
12
8
4
0
0.0
0.20
V_GS = 2.5 V
V_GS = 2 V
V_GS = 1.5 V
0.5
1.0
1.5
2.0
2.5
3.0
V_DS - Drain-to-Source Voltage (V)
Output Characteristics
0.16
V_GS = 2.5 V
0.12
0.08
V_GS = 4.5 V
0.04
0
4
8
12
16
20
I_D - Drain Current (A)
On-Resistance vs. Drain Current and Gate Voltage
10
I_D = 5.1 A
8
V_DS = 10 V
6
V_DS = 16 V
4
3
2
T_C = 125 °C
1
T_C = 25 °C
T_C = - 55 °C
0
0.0
0.5
1.0
1.5
2.0
V_GS - Gate-to-Source Voltage (V)
Transfer Characteristics
800
700
600
500
C_iss
400
300
200
C_oss
100
C_rss
0
0 2 4 6 8 10 12 14 16 18 20
V_DS - Drain-to-Source Voltage (V)
Capacitance
1.6
V_GS = 4.5 V
I_D = 3.6 A
1.4
1.2
1.0
2
0.8
0
0
2
4
6
8
10
12
Q_g - Total Gate Charge (nC)
Gate Charge
0.6
- 50 - 25 0
25 50 75 100 125 150
T_J - Junction Temperature (°C)
On-Resistance vs. Junction Temperature
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4
Document Number: 73696
S-81449-Rev. C, 23-Jun-08