SI5857DU Datasheet, PDF (5/10 Pages) Vishay Siliconix – P-Channel 20-V (D-S) MOSFET With Schottky Diode

Si5857DU
Vishay Siliconix
MOSFET TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
20
0.16
0.14
10
0.12
I_D = 3.6 A
T_J = 150 °C
T_J = 25 °C
1
0.0
0.2
0.4
0.6
0.8
1.0
1.2
V_SD - Source-to-Drain Voltage (V)
Source-Drain Diode Forward Voltage
1.3
0.10
0.08
T_A = 125 °C
0.06
T_A = 25 °C
0.04
2.0
2.5
3.0
3.5
4.0
4.5
5.0
V_GS - Gate-to-Source Voltage (V)
On-Resistance vs. Gate-to-Source Voltage
30
1.2
I_D = 250 µA
1.1
1.0
0.9
0.8
0.7
- 50 - 25
0 25 50 75 100 125 150
T_J - Temperature ( °C)
Threshold Voltage
100
Limited by R_DS(on)*
10 ^ID(on) ^limited
25
20
15
10
5
0
0.001 0.01
0.1
1
10
100 1000
Time (s)
Single Pulse Power, Junction-to-Ambient
IDM limited
100 µs
1
1 ms
10 ms
100 ms
1s
0.1
10 s
DC
T_A = 25 °C
Single Pulse ^{BVDSS limited}
0.01
0.1
1
10
100
V_DS - Drain-to-Source Voltage (V)
* V_GS > minimum V_GS at which R_DS(on) is specified
Safe Operating Area, Junction-to-Case
Document Number: 73696
S-81449-Rev. C, 23-Jun-08
www.vishay.com
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