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SI5857DU Datasheet, PDF (7/10 Pages) Vishay Siliconix – P-Channel 20-V (D-S) MOSFET With Schottky Diode
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MOSFET TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
1
Duty Cycle = 0.5
Si5857DU
Vishay Siliconix
0.2
0.1
0.1
0.05
0.02
0.01
10-4
Single Pulse
10-3
Notes:
PDM
t1
t2
1. Duty Cycle, D =
t1
t2
2. Per Unit Base = RthJA = 87 °C/W
3. TJM - TA = PDMZthJA(t)
4. Surface Mounted
10-2
10-1
1
10
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Ambient
100
1000
1
Duty Cycle = 0.5
0.2
0.05
0.1
Single Pulse
0.02
0.01
10-4
10-3
10-2
10-1
1
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Case
Document Number: 73696
S-81449-Rev. C, 23-Jun-08
www.vishay.com
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