SI5857DU Datasheet, PDF (1/10 Pages) Vishay Siliconix – P-Channel 20-V (D-S) MOSFET With Schottky Diode

Si5857DU
Vishay Siliconix
P-Channel 20-V (D-S) MOSFET With Schottky Diode
MOSFET PRODUCT SUMMARY
V_DS (V)
- 20
R_DS(on) (Ω)
0.058 at V_GS = - 4.5 V
0.100 at V_GS = - 2.5 V
I_D (A)^a
6
6
Q_g (Typ.)
5.5 nC
SCHOTTKY PRODUCT SUMMARY
V_KA (V)
V_f (V)
Diode Forward Voltage
I_F (A)^a
20
0.375 at 1 A
2
PowerPAK^® ChipFET^® Dual
A
K
K
A
S
D
D
Marking Code
JA XXX
Lot Traceability
and Date Code
Part # Code
G
FEATURES
• Halogen-free
• LITTLE FOOT^® Plus Power MOSFET
• New Thermally Enhanced PowerPAK^®
ChipFET^® Package
- Small Footprint Area
- Low On-Resistance
- Thin 0.8 mm Profile
RoHS
COMPLIANT
APPLICATIONS
• Charging Switch for Portable Devices
- With Integrated Low V_f Trench Schottky Diode
S
K
G
Bottom View
Ordering Information: Si5857DU-T1-GE3 (Lead (Pb)-free and Halogen-free)
D
P-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS T_A = 25 °C, unless otherwise noted
Parameter
Symbol
Drain-Source Voltage (MOSFET)
Reverse Voltage (Schottky)
Gate-Source Voltage (MOSFET)
Continuous Drain Current (T_J = 150 °C) (MOSFET)
Pulsed Drain Current (MOSFET)
Continuous Source Current (MOSFET Diode Conduction)
Average Forward Current (Schottky)
Pulsed Forward Current (Schottky)
Maximum Power Dissipation (MOSFET)
Maximum Power Dissipation (Schottky)
Operating Junction and Storage Temperature Range
Soldering Recommendation (Peak Temperature)^{d, e}
T_C = 25 °C
T_C = 70 °C
T_A = 25 °C
T_A = 70 °C
T_C = 25 °C
T_A = 25 °C
T_C = 25 °C
T_C = 70 °C
T_A = 25 °C
T_A = 70 °C
T_C = 25 °C
T_C = 70 °C
T_A = 25 °C
T_A = 70 °C
V_DS
V_KA
V_GS
I_D
I_DM
I_S
I_F
I_FM
P_D
P_D
T_J, T_stg
Document Number: 73696
S-81449-Rev. C, 23-Jun-08
A
Limit
- 20
20
± 12
6^a
6^a
- 5^{b, c}
- 4^{b, c}
- 20
- 6^a
1.9^{b, c}
2
7
10.4
6.7
2.3^{b, c}
1.5^{b, c}
7.8
5
2.1
1.3
- 55 to 150
260
Unit
V
A
W
W
°C
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