SI4831BDY Datasheet, PDF (8/9 Pages) Vishay Siliconix – P-Channel 30-V (D-S) MOSFET with Schottky Diode

Si4831BDY
Vishay Siliconix
SCHOTTKY TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
100
10
10
1
30 V
10 V
0.1
T_J = 150 °C
1
T_J = 25 °C
0.01
0.001
0.0001
0
25
50
75
100 125 150
T_J - Temperature (°C)
Reverse Current vs. Junction Temperature
0
0.0
0.1
0.2
0.4
0.5
0.6
V_F - Forward Voltage Drop (V)
Forward Voltage Drop
500
400
300
200
100
0
0
6
12
18
24
30
V_KA - Reverse Voltage (V)
Capacitance
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?70483.
www.vishay.com
8
Document Number: 70483
S09-0394-Rev. B, 09-Mar-09