SI4831BDY Datasheet, PDF (4/9 Pages) Vishay Siliconix – P-Channel 30-V (D-S) MOSFET with Schottky Diode

Si4831BDY
Vishay Siliconix
MOSFET TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
30
2.0
V_GS = 10 thru 5 V
24
1.6
18
4V
12
6
0
0.0
0.10
3V
0.5
1.0
1.5
2.0
2.5
V_DS - Drain-to-Source Voltage (V)
Output Characteristics
1.2
0.8
T_J = 25 °C
T_J = 125 °C
0.4
- 55 °C
0.0
0.0
0.8
1.6
2.4
3.2
4.0
V_GS - Gate-to-Source Voltage (V)
Transfer Characteristics
1000
0.08
0.06
0.04
0.02
V_GS = 4.5 V
V_GS = 10 V
0.00
0
6
12
18
24
30
I_D - Drain Current (A)
On-Resistance vs. Drain Current and Gate Voltage
10
I_D = 5 A
8
V_DS = 10 V
V_DS = 15 V
6
V_DS = 20 V
4
2
800
C_iss
600
400
200
C_rss
C_oss
0
0
6
12
18
24
30
V_DS - Drain-to-Source Voltage (V)
Capacitance
1.8
I_D = 5 A
1.5
V_GS = 10 V
1.2
V_GS = 4.5 V
0.9
0
0
3.6
7.2
10.8
14.4
18.0
Q_g - Total Gate Charge (nC)
Gate Charge
0.6
- 50 - 25 0
25 50 75 100 125 150
T_J - Junction Temperature (°C)
On-Resistance vs. Junction Temperature
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4
Document Number: 70483
S09-0394-Rev. B, 09-Mar-09