SI4831BDY Datasheet, PDF (3/9 Pages) Vishay Siliconix – P-Channel 30-V (D-S) MOSFET with Schottky Diode

Si4831BDY
Vishay Siliconix
SCHOTTKY SPECIFICATIONS T_J = 25 °C, unless otherwise noted
Parameter
Symbol
Test Conditions
Forward Voltage Drop
V_F
I_F = 3 A
I_F = 3 A, T_J = 125 °C
Maximum Reverse Leakage Current
I_rm
V_R = 30 V
V_R = 30 V, T_J = 75 °C
V_R = 30 V, T_J = 125 °C
Junction Capacitance
C_T
V_R = 15 V
Min. Typ. Max. Unit
0.485 0.53
V
0.42 0.47
0.008 0.1
0.4
5
mA
6.5
20
102
pF
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
Document Number: 70483
S09-0394-Rev. B, 09-Mar-09
www.vishay.com
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