SI4831BDY Datasheet, PDF (2/9 Pages) Vishay Siliconix – P-Channel 30-V (D-S) MOSFET with Schottky Diode

Si4831BDY
Vishay Siliconix
MOSFET SPECIFICATIONS T_J = 25 °C, unless otherwise noted
Parameter
Symbol
Test Conditions
Static
Drain-Source Breakdown Voltage
V_DS
V_DS = 0 V, I_D = - 250 µA
V_DS Temperature Coefficient
V_GS(th) Temperature Coefficient
ΔV_DS/TJ
ΔV_GS(th)/TJ
I_D = 250 µA
Gate Threshold Voltage
V_GS(th)
V_DS = V_GS, I_D = - 250 µA
Gate-Body Leakage
I_GSS
V_DS = 0 V, V_GS = ± 20 V
Zero Gate Voltage Drain Current
I_DSS
V_DS = - 30 V, V_GS = 0 V
V_DS = - 30 V, V_GS = 0 V, T_J = 75 °C
On-State Drain Current^a
I_D(on)
V_DS ≥ - 5 V, V_GS = - 10 V
Drain-Source On-State Resistance^a
R_DS(on)
V_GS = - 10 V, I_D = - 5 A
V_GS = - 4.5 V, I_D = - 3 A
Forward Transconductance^a
g_fs
V_DS = - 15 V, I_D = - 5 A
Dynamic^b
Input Capacitance
C_iss
Output Capacitance
Reverse Transfer Capacitance
C_oss
C_rss
V_DS = - 15 V, V_GS = 0 V, f = 1 MHz
Total Gate Charge
Q_g
V_DS = - 15 V, V_GS = - 10 V, I_D = - 5 A
Gate-Source Charge
Gate-Drain Charge
Q_gs
V_DS = - 15 V, V_GS = - 4.5 V, I_D = - 5 A
Q_gd
Gate Resistance
R_g
f = 1 MHz
Turn-On Delay Time
t_d(on)
Rise Time
Turn-Off Delay Time
t_r
t_d(off)
V_DD = - 15 V, R_L = 3 Ω
I_D ≅ - 5 A, V_GEN = - 4.5 V, R_g = 1 Ω
Fall Time
t_f
Turn-On Delay Time
t_d(on)
Rise Time
Turn-Off Delay Time
t_r
t_d(off)
V_DD = - 15 V, R_L = 3 Ω
I_D ≅ - 5 A, V_GEN = - 10 V, R_g = 1 Ω
Fall Time
t_f
Drain-Source Body Diode Characteristics
Continous Source-Drain Diode Current
I_S
T_C = 25 °C
Pulse Diode Forward Current^a
I_SM
Body Diode Voltage
V_SD
I_S = - 1.4 A, V_GS = 0 V
Body Diode Reverse Recovery Time
t_rr
Body Diode Reverse Recovery Charge
Reverse Recovery Fall Time
Q_rr
t_a
I_F = - 2 A, dI/dt = 100 A/µs, T_J = 25 °C
Reverse Recovery Rise Time
t_b
Notes:
a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %.
b. Guaranteed by design, not subject to production testing.
Min.
- 30
-1
- 10
Typ.
Max.
Unit
- 30
3.6
0.034
0.052
11
-3
± 100
-1
- 10
0.042
0.065
V
mV/°C
V
nA
µA
A
Ω
S
625
150
pF
115
17
26
7.8
12
nC
1.6
3.5
7
14
Ω
35
55
100
150
22
35
12
20
8
16
8
16
ns
24
40
7
14
- 3.3
A
- 30
- 0.78 - 1.2
V
30
45
ns
15
25
nC
14
16
ns
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Document Number: 70483
S09-0394-Rev. B, 09-Mar-09