SI4831BDY Datasheet, PDF (5/9 Pages) Vishay Siliconix – P-Channel 30-V (D-S) MOSFET with Schottky Diode

MOSFET TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
100
0.20
0.16
I_D = 5 A
10
0.12
Si4831BDY
Vishay Siliconix
T_J = 150 °C
1
T_J = 25 °C
0
0.0
0.3
0.6
0.9
1.2
1.5
V_SD - Source-to-Drain Voltage (V)
Source-Drain Diode Forward Voltage
0.5
0.08
T_A = 125 °C
0.04
T_A = 25 °C
0
0 1 2 3 4 5 6 7 8 9 10
V_GS - Gate-to-Source Voltage (V)
On-Resistance vs. Gate-to-Source Voltage
60
0.3
0.1
- 0.1
I_D = 250 µA
48
I_D = 5 mA
36
24
12
- 0.3
- 50 - 25
0 25 50 75 100 125 150
T_J - Temperature (°C)
Threshold Voltage
100
Limited by R_DS(on)*
10
0
0.001
0.01
0.1
1
10
Time (s)
Single Pulse Power, Junction-to-Ambient
1 ms
1
10 ms
100 ms
0.1
1s
10 s
T_A = 25 °C
DC
Single Pulse
0.01
0.1
1
10
100
V_DS - Drain-to-Source Voltage (V)
* V_GS minimum V_GS at which R_DS(on) is specified
Safe Operating Area, Junction-to-Case
Document Number: 70483
S09-0394-Rev. B, 09-Mar-09
www.vishay.com
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