SI4831BDY Datasheet, PDF (1/9 Pages) Vishay Siliconix – P-Channel 30-V (D-S) MOSFET with Schottky Diode

Si4831BDY
Vishay Siliconix
P-Channel 30-V (D-S) MOSFET with Schottky Diode
MOSFET PRODUCT SUMMARY
V_DS (V)
R_DS(on) (Ω)
I_D (A)^a
- 30
0.042 at V_GS = - 10 V
- 6.6
0.065 at V_GS = - 4.5 V
- 5.3
Q_g (Typ.)
7.8
SCHOTTKY PRODUCT SUMMARY
V_KA (V)
30
V_F (V)
Diode Forward Voltage
0.53 V at 3 A
I_D (A)^a
3.0
SO-8
A1
A2
S3
G4
8^K
7K
6D
5D
FEATURES
• Halogen-free According to IEC 61249-2-21
Available
• LITTLE FOOT^® Plus Power MOSFET
• 100 % R_g Tested
APPLICATIONS
• HDD
• Asynchronous Rectification
S
K
G
Top View
Ordering Information: Si4831BDY-T1-E3 (Lead (Pb)-free)
Si4831BDY-T1-GE3 (Lead (Pb)-free and Halogen-free)
D
P-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS T_A = 25 °C, unless otherwise noted
Parameter
Symbol
Drain-Source Voltage (MOSFET)
V_DS
Reverse Voltage (Schottky)
V_KA
Gate-Source Voltage (MOSFET)
V_GS
T_C = 25 °C
Continuous Drain Current (T_J = 150 °C) (MOSFET)
T_C = 70 °C
T_A = 25 °C
I_D
T_A = 70 °C
Pulsed Drain Current (MOSFET)
I_DM
Continuous Source Current (MOSFET Diode Conduction)
T_C = 25 °C
T_A = 25 °C
I_S
Average Forward Current (Schottky)
I_F
Pulsed Forward Current (Schottky)
I_FM
Maximum Power Dissipation (MOSFET and Schottky)
T_C = 25 °C
T_C = 70 °C
T_A = 25 °C
P_D
Operating Junction and Storage Temperature Range
T_A = 70 °C
T_J, T_stg
Limit
- 30
- 30
± 20
- 6.6
- 5.2
- 5.1^{b, c}
- 3.9^{b, c}
- 30
- 2.7
- 1.6^{b, c}
- 3^b
- 20
3.3
2.1
2.0^{b, c}
1.2^{b, c}
- 55 to 150
A
Unit
V
A
W
°C
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient (MOSFET and Schottky)^{b, c, d}
Maximum Junction-to-Foot (Drain) (MOSFET and Schottky)
Notes:
a. Based on T_C = 25 °C.
b. Surface Mounted on FR4 board.
c. t ≤ 10 s.
d. Maximum under Steady State conditions is 110 °C/W.
Document Number: 70483
S09-0394-Rev. B, 09-Mar-09
Symbol
R_thJA
R_thJF
Typical
53
30
Maximum
62.5
37
Unit
°C/W
www.vishay.com
1