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| SI4823DY Datasheet, PDF (8/12 Pages) Vishay Siliconix – P-Channel 20 V (D-S) MOSFET with Schottky Diode | |||
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Si4823DY
Vishay Siliconix
SCHOTTKY TYPICAL CHARACTERISTICS TA = 25 °C, unless otherwise noted
1
0.1
0.01
10 -4
10 -3
Notes:
PDM
t1
t2
1. Duty Cycle, D =
t1
2. Per Unit Base = Rtht2JA = 92 °C/W
3. TJM - TA = PDMZthJA(t)
4. Surface Mounted
10 -2
10 -1
1
10
100
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Ambient
1000
1
Duty Cycle = 0.5
0.02
0.05
0.1
0.1
0.05
0.02
0.01
10 -4
10 -3
10 -2
10 -1
1
Square Wave Pulse Duration (s)
10
100
Normalized Thermal Transient Impedance, Junction-to-Foot
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?64715.
www.vishay.com
8
Document Number: 64715
S10-1051-Rev. C, 03-May-10
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