SI4823DY Datasheet, PDF (4/12 Pages) Vishay Siliconix – P-Channel 20 V (D-S) MOSFET with Schottky Diode

Si4823DY
Vishay Siliconix
MOSFET TYPICAL CHARACTERISTICS T_A = 25 °C, unless otherwise noted
10
1.5
I_D = 3.3 A
8
V_DS = 10 V
1.3
6
V_DS = 16 V
1.1
4
0.9
2
V_GS = 10 V, I_D = 3.3 A
V_GS = 4.5 V, I_D = 2.6 A
0
0.0
1.5
3.0
4.5
6.0
7.5
9.0
Q_g - Total Gate Charge (nC)
Gate Charge
10
T_J = 150 °C
T_J = 25 °C
1
0.7
- 50 - 25 0
25 50 75 100 125 150
T_J - Junction Temperature (°C)
On-Resistance vs. Junction Temperature
0.20
I_D = 3.3 A
0.16
0.12
T_J = 125 °C
0.08
T_J = 25 °C
0.04
0.1
0.0
0.2
0.4
0.6
0.8
1.0
1.2
V_SD - Source-to-Drain Voltage (V)
Source-Drain Diode Forward Voltage
1.3
1.1
I_D = 250 µA
0.9
0.7
0.00
0
3
6
9
12
V_GS - Gate-to-Source Voltage (V)
On-Resistance vs. Gate-to-Source Voltage
50
40
30
20
10
0.5
- 50 - 25
0 25 50 75 100 125 150
T_J - Temperature (°C)
Threshold Voltage
0
0.001
0.01
0.1
1
10
Time (s)
Single Pulse Power, Junction-to-Ambient
www.vishay.com
4
Document Number: 64715
S10-1051-Rev. C, 03-May-10