SI4823DY Datasheet, PDF (5/12 Pages) Vishay Siliconix – P-Channel 20 V (D-S) MOSFET with Schottky Diode

Si4823DY
Vishay Siliconix
MOSFET TYPICAL CHARACTERISTICS T_A = 25 °C, unless otherwise noted
100
Limited by R_DS(on)*
10
5
4
3
2
1
0
0
1.25
1 ms
1
10 ms
100 ms
1s
0.1
T_A = 25 °C
Single Pulse
10 s
DC
0.01
0.1
BVDSS Limited
1
10
100
V_DS - Drain-to-Source Voltage (V)
* V_GS > minimum V_GS at which R_DS(on) is specified
Safe Operating Area, Junction-to-Ambient
3.5
3.0
2.5
2.0
1.5
1.0
0.5
25
50
75
100 125 150
T_C - Case Temperature (°C)
Current Derating*
0.0
0
25
50
75
100 125 150
T_C - Case Temperature (°C)
Power Derating, Junction-to-Case
1.00
0.75
0.50
0.25
0.00
0
25
50
75
100 125 150
T_A - Ambient Temperature (°C)
Power Derating, Junction-to-Ambient
Document Number: 64715
S10-1051-Rev. C, 03-May-10
* The power dissipation P_D is based on T_J(max) = 150 °C, using
junction-to-case thermal resistance, and is more useful in settling the
upper dissipation limit for cases where additional heatsinking is
used. It is used to determine the current rating, when this rating falls
below the package limit.
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