SI4823DY Datasheet, PDF (2/12 Pages) Vishay Siliconix – P-Channel 20 V (D-S) MOSFET with Schottky Diode

Si4823DY
Vishay Siliconix
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient (MOSFET)^{b, e}
Maximum Junction-to-Foot (Drain) (MOSFET)
Maximum Junction-to-Ambient (Schottky)^{b, f}
Maximum Junction-to-Foot (Drain) (Schottky)
Notes:
a. Package limited.
b. Surface mounted on 1" x 1" FR4 board.
c. t = 10 s.
d. Based on T_C = 25 °C.
e. Maximum under steady state conditions is 110 °C/W.
f. Maximum under steady state conditions is 115 °C/W.
Symbol
R_thJA
R_thJF
R_thJA
R_thJF
Typical
60
35
63
39
Maximum
71.5
45
78
47
Unit
°C/W
SPECIFICATIONS T_J = 25 °C, unless otherwise noted
Parameter
Symbol
Test Conditions
Static
Drain-Source Breakdown Voltage
V_DS Temperature Coefficient
V_GS(th) Temperature Coefficient
Gate-Source Threshold Voltage
Gate-Source Leakage
Zero Gate Voltage Drain Current
On-State Drain Current^a
Drain-Source On-State Resistance^a
Forward Transconductance^a
Dynamic^b
V_DS
ΔV_DS/T_J
ΔV_GS(th)/T_J
V_GS(th)
I_GSS
I_DSS
I_D(on)
R_DS(on)
g_fs
V_GS = 0 V, I_D = - 250 µA
I_D = - 250 µA
V_DS = V_GS, I_D = - 250 µA
V_DS = 0 V, V_GS = ± 12 V
V_DS = - 20 V, V_GS = 0 V
V_DS = - 20 V, V_GS = 0 V, T_J = 55 °C
V_DS ≤ 5 V, V_GS = - 4.5 V
V_GS = - 4.5 V, I_D = - 3.3 A
V_GS = - 2.5 V, I_D = - 2.6 A
V_DS = - 10 V, I_D = - 3.3 A
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
C_iss
C_oss
C_rss
Q_g
V_DS = - 10 V, V_GS = 0 V, f = 1 MHz
V_DS = - 10 V, V_GS = - 10 V, I_D = - 3.3 A
Gate-Source Charge
Gate-Drain Charge
Gate Resistance
Turn-On Delay Time
Rise Time
Turn-Off DelayTime
Fall Time
Turn-On Delay Time
Rise Time
Turn-Off DelayTime
Fall Time
Drain-Source Body Diode Characteristics
Q_gs
Q_gd
R_g
t_d(on)
t_r
t_d(off)
t_f
t_d(on)
t_r
t_d(off)
t_f
Continuous Source-Drain Diode Current
I_S
Pulse Diode Forward Current
I_SM
Body Diode Voltage
V_SD
Body Diode Reverse Recovery Time
t_rr
Body Diode Reverse Recovery Charge
Q_rr
Reverse Recovery Fall Time
t_a
Reverse Recovery Rise Time
t_b
Notes:
a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %.
b. Guaranteed by design, not subject to production testing.
V_DS = - 10 V, V_GS = - 4.5 V, I_D = - 3.3 A
f = 1 MHz
V_DD = - 10 V, R_L = 3.8 Ω
I_D ≅ - 2.6 A, V_GEN = - 10 V, R_g = 1 Ω
V_DD = - 10 V, R_L = 3.8 Ω
I_D ≅ - 2.6 A, V_GEN = - 4.5 V, R_g = 1 Ω
T_C = 25 °C
I_S = - 2.6 A, V_GS = 0 V
I_F = - 2.6 A, dI/dt = 100 A/µs, T_J = 25 °C
www.vishay.com
2
Min.
- 20
- 0.6
- 15
1.2
Typ. Max. Unit
- 20
3
0.090
0.140
6
- 1.5
± 100
-1
- 10
0.108
0.175
V
mV/°C
V
nA
µA
A
Ω
S
330
660
80
160
pF
57
114
8
12
4
6
nC
0.8
1.4
6
12
Ω
3
6
10
20
16
24
8
15
ns
18
27
40
60
18
27
10
15
- 6.2
A
- 15
- 0.8 - 1.2
V
23
35
ns
14
21
nC
11
ns
12
Document Number: 64715
S10-1051-Rev. C, 03-May-10