SI4823DY Datasheet, PDF (3/12 Pages) Vishay Siliconix – P-Channel 20 V (D-S) MOSFET with Schottky Diode

SCHOTTKY SPECIFICATIONS T_J = 25 °C, unless otherwise noted
Parameter
Symbol
Test Conditions
Forward Voltage Drop
V_F
Maximum Reverse Leakage Current
I_rm
Junction Capacitance
C_T
I_F = 1 A
I_F = 1 A, T_J = 125 °C
V_R = 30 V
V_R = 30 V, T_J = 85 °C
V_R = 30 V, T_J = 125 °C
V_R = 15 V
Si4823DY
Vishay Siliconix
Min. Typ.
Max.
Unit
0.46
0.50
V
0.41
0.50
0.025
0.1
0.6
6
mA
5
25
35
pF
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
MOSFET TYPICAL CHARACTERISTICS T_A = 25 °C, unless otherwise noted
15
2.0
V_GS = 10 V thru 4 V
12
1.6
9
V_GS = 3 V
1.2
T_C = - 55 °C
6
3
V_GS = 2 V
0
0
1
2
3
4
5
V_DS - Drain-to-Source Voltage (V)
Output Characteristics
0.20
V_GS = 2.5 V
0.16
0.12
0.08
V_GS = 4.5 V
0.04
0
3
6
9
12
15
I_D - Drain Current (A)
On-Resistance vs. Drain Current and Gate Voltage
0.8
T_C = 25 °C
0.4
T_C = 125 °C
0.0
0.0
0.4
0.8
1.2
1.6
2.0
V_GS - Gate-to-Source Voltage (V)
Transfer Characteristics
600
500
C_iss
400
300
200
C_oss
100
C_rss
0
0
4
8
12
16
20
V_DS - Drain-to-Source Voltage (V)
Capacitance
Document Number: 64715
S10-1051-Rev. C, 03-May-10
www.vishay.com
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