 English |
|
|
|
|
|
|
|
| SI4823DY Datasheet, PDF (1/12 Pages) Vishay Siliconix – P-Channel 20 V (D-S) MOSFET with Schottky Diode | |||
| |||
|
Si4823DY
Vishay Siliconix
P-Channel 20 V (D-S) MOSFET with Schottky Diode
PRODUCT SUMMARY
VDS (V)
- 20
RDS(on) (Ω)
0.108 at VGS = - 4.5 V
0.175 at VGS = - 2.5 V
ID (A)d
- 4.1
- 3.3
Qg (Typ.)
4 nC
SCHOTTKY PRODUCT SUMMARY
VKA (V)
30
Vf (V)
Diode Forward Voltage
0.5 at 1 A
IF (A)a
2
A1
A2
S3
G4
SO-8
8K
7K
6D
5D
FEATURES
⢠Halogen-free According to IEC 61249-2-21
Definition
⢠LITTLE FOOT® Plus Schottky
⢠100 % Rg Tested
⢠Compliant to RoHS Directive 2002/95/EC
APPLICATIONS
⢠Portable Devices
- Ideal for Boost Circuits
- Ideal for Book Circuits
S
K
G
Top View
Ordering Information: Si4823DY-T1-E3 (Lead (Pb)-free)
Si4823DY-T1-GE3 (Lead (Pb)-free and Halogen-free)
D
P-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted
Parameter
Symbol
Drain-Source Voltage (MOSFET)
VDS
Reverse Voltage (Schottky)
VKA
Gate-Source Voltage (MOSFET)
VGS
TC = 25 °C
Continuous Drain Current (TJ = 150 °C) (MOSFET)
TC = 70 °C
TA = 25 °C
ID
TA = 70 °C
Pulsed Drain Current (MOSFET)
IDM
Continuous Source-Drain Diode Current
(MOSFET Diode Conduction)
Average Forward Current (Schottky)
Pulsed Forward Current (MOSFET)
TC = 25 °C
TA = 25 °C
IS
IF
IFM
Maximum Power Dissipation (MOSFET)
Maximum Power Dissipation (Schottky)
Operating Junction and Storage Temperature Range
TC = 25 °C
TC = 70 °C
TA = 25 °C
TA = 70 °C
TC = 25 °C
TC = 70 °C
TA = 25 °C
TA = 70 °C
PD
TJ, Tstg
Limit
- 20
30
± 12
- 4.1
- 3.3
- 3.3b, c
- 2.6b, c
- 15
- 2.3
- 1.4b, c
- 2b
-3
2.8
1.8
1.7b, c
1.1b, c
2.7
1.7
1.6b, c
1.0b, c
- 55 to 150
A
Unit
V
A
W
°C
Document Number: 64715
S10-1051-Rev. C, 03-May-10
www.vishay.com
1
|
▷ |
German
Russian
Spanish
Italian
Polish
Chinese
Japanese
Korean
French
Portuguese