DG411LE Datasheet, PDF (8/17 Pages) Vishay Siliconix – Low Parasitic Capacitance and Leakage, Quad SPST Switches

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DG411LE, DG412LE, DG413LE
Vishay Siliconix
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
40
30
V+ = +5 V
20
I_D(ON)
10
0
-10
I_D(OFF)
-20
I_S(OFF)
-30
-40
-5 -4 -3 -2 -1 0 1 2 3 4 5
V_D - Drain Voltage (V), V_S = -V_D
Leakage Current vs. Drain Voltage
10.0
9.0
V+ = 12 V
8.0
V± = ± 5 V
7.0
6.0
5.0
4.0
V+ = 5 V
3.0
2.0
1.0
V+ = 3V
0
-5 -4 -3 -2 -1 0 1 2 3 4 5 6 7 8 9 10 11 12
V_D - Analog Voltage (V)
Charge Injection vs. Drain Voltage
60
55
50
Single supply
45
40
35
30
25
t_ON
20
15
t_OFF
10
5
0
2
4
6
8
10 12 14 16
V+ - Positive Supply Voltage (V)
Switching Time vs. Single Supply Voltage
2.2
2.1 ^{VL = V+ (for V+ < 5 V) and 5 V (V+ ≥ 5 V)}
2.0
V_IH
1.9
1.8
V_IL
1.7
1.6
1.5
1.4
1.3
1.2
1.1
2
4
6
8
10 12 14 16
V+ - Positive Supply Voltage (V)
Threshold vs. Single Supply Current
30
25
Dual supply
20
t_ON
15
t_OFF
10
5
0
3
4
5
6
7
8
V+/- - Positive Supply Voltage (V)
Switching Time vs. Dual Supply Voltage
20
18
C_D(ON), V+ = +3 V
Single supply
C_D(ON), V+ = +5 V
16
C_D(ON), V+ = +12 V
14
12
C_D(OFF), V+ = +3 V
10
C_D(OFF), V+ = +5 V
8
C_D(OFF), V+ = +12 V
6
4
C_S(OFF), V+ = +3 V
2
C_S(OFF), V+ = +5 V
C_S(OFF), V+ = +12 V
0
0 1 2 3 4 5 6 7 8 9 10 11 12
Analog Voltage (V)
Drain Capacitance vs. Drain Voltage (Single Supply)
S16-0391-Rev. A, 07-Mar-16
8
Document Number: 78091
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