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DG411LE Datasheet, PDF (11/17 Pages) Vishay Siliconix – Low Parasitic Capacitance and Leakage, Quad SPST Switches
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www.vishay.com
TEST CIRCUITS
DG411LE, DG412LE, DG413LE
Vishay Siliconix
VL
C
V+
C
VS
Rg = 50 Ω
0 V, 2.4 V
NC
VL
S1
IN1
S2
0 V, 2.4 V
IN2
GND
XTALK Isolation = 20 log
C = RF bypass
VS
VO
Fig. 5 - Crosstalk
V+
D1
D2
V-
C
V-
50 Ω
VO
RL
VL
C
VS
Rg = 50 Ω
0 V, 2.4 V
VL
S
IN
GND
V+
C
V+
D
VO
V-
C
RL
50 Ω
VL
C
VL
IN
0 V, 2.4 V
V+
C
V+
S
D
Meter
HP4192A
Impedance
Analyzer
or Equivalent
V-
GND
V-
C
VS
Off Isolation = 20 log
VO
V-
C = RF Bypass
Fig. 6 - Off-Isolation
Fig. 7 - Source / Drain Capacitances
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Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?78091.
S16-0391-Rev. A, 07-Mar-16
11
Document Number: 78091
For technical questions, contact: analogswitchsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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