VS-GB90DA120U Datasheet, PDF (7/10 Pages) Vishay Siliconix – NPT Gen 5 IGBT technology

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50 V
1000 V
1
L
V_C *
D.U.T.
2
* Driver same type as D.U.T.; V_C = 80 % of V_ce(max.)
* Note: Due to the 50 V power supply, pulse width and inductor
will increase to obtain Id
Fig. 19a - Clamped Inductive Load Test Circuit
VS-GB90DA120U
Vishay Semiconductors
R = ^VCC
ICM
D.U.T.
R_g
+
- _VCC
Fig. 19b - Pulsed Collector Current Test Circuit
Diode clamp/
D.U.T.
-+
-5V
R_g
L
D.U.T./
driver
+
-
V_CC
Fig. 20a - Switching Loss Test Circuit
1
2
3
V_C
90 %
10 %
90 %
t_d(off)
10 %
5%
I_C
t_r
t_f
t_d(on)
E_on
E_off
E_ts = (E_on + E_off)
Fig. 20b - Switching Loss Waveforms Test Circuit
t = 5 µs
Revision: 20-May-16
7
Document Number: 94722
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