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VS-GB90DA120U Datasheet, PDF (2/10 Pages) Vishay Siliconix – NPT Gen 5 IGBT technology
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VS-GB90DA120U
Vishay Semiconductors
ELECTRICAL SPECIFICATIONS (TJ = 25 °C unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
Collector to emitter breakdown
voltage
VBR(CES) VGE = 0 V, IC = 250 μA
Collector to emitter voltage
Gate threshold voltage
Temperature coefficient of threshold
voltage
VCE(on)
VGE(th)
VGE = 15 V, IC = 75 A
VGE = 15 V, IC = 75 A, TJ = 125 °C
VGE = 15 V, IC = 75 A, TJ = 150 °C
VCE = VGE, IC = 250 μA
VCE = VGE, IC = 250 μA, TJ = 125 °C
VGE(th)/TJ VCE = VGE, IC = 1 mA (25 °C to 125 °C)
Collector to emitter leakage current
Forward voltage drop, diode
Gate to emitter leakage current
VGE = 0 V, VCE = 1200 V
ICES
VGE = 0 V, VCE = 1200 V, TJ = 125 °C
VGE = 0 V, VCE = 1200 V, TJ = 150 °C
VGE = 0 V, IF = 75 A
VFM
VGE = 0 V, IF = 75 A, TJ = 125 °C
VGE = 0 V, IF = 75 A, TJ = 150 °C
IGES
VGE = ± 20 V
MIN.
1200
-
-
-
4
-
-
-
-
-
-
-
-
-
TYP.
-
3.3
3.6
3.7
5
3.2
-12
7
1.4
6.5
3.4
3.2
3.05
-
MAX.
-
3.8
3.9
-
6
-
-
250
10
20
5.0
5.2
-
± 250
UNITS
V
mV/°C
μA
mA
V
nA
SWITCHING CHARACTERISTICS (TJ = 25 °C unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
Total gate charge (turn-on)
Gate to emitter charge (turn-on)
Gate to collector charge (turn-on)
Turn-on switching loss
Turn-off switching loss
Total switching loss
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Turn-on switching loss
Turn-off switching loss
Total switching loss
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Reverse bias safe operating area
Diode reverse recovery time
Diode peak reverse current
Diode recovery charge
Diode reverse recovery time
Diode peak reverse current
Diode recovery charge
Qg
Qge
Qgc
Eon
Eoff
Etot
td(on)
tr
td(off)
tf
Eon
Eoff
Etot
td(on)
tr
td(off)
tf
RBSOA
trr
Irr
Qrr
trr
Irr
Qrr
IC = 50 A, VCC = 600 V, VGE = 15 V
IC = 75 A, VCC = 600 V,
VGE = 15 V, Rg = 5 
L = 500 μH, TJ = 25 °C
Energy losses
include tail and
diode recovery
Diode used
HFA16PB120
IC = 75 A, VCC = 600 V,
VGE = 15 V, Rg = 5  
L = 500 μH, TJ = 125 °C
TJ = 150 °C, IC = 200 A, Rg = 22 
VGE = 15 V to 0 V, VCC = 900 V,
VP = 1200 V, L = 500 μH
IF = 50 A, dIF/dt = 200 A/μs, VR = 200 V
IF = 50 A, dIF/dt = 200 A/μs, VR = 200 V,
TJ = 125 °C
MIN.
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
TYP.
690
65
250
1.2
2.1
3.3
250
38
280
90
1.7
4.08
5.78
245
48
280
140
MAX.
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
UNITS
nC
mJ
ns
mJ
ns
Fullsquare
140
-
ns
13
-
A
860
-
nC
210
-
ns
19
-
A
1880
-
nC
Revision: 20-May-16
2
Document Number: 94722
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