VS-GB90DA120U Datasheet, PDF (4/10 Pages) Vishay Siliconix – NPT Gen 5 IGBT technology

www.vishay.com
VS-GB90DA120U
Vishay Semiconductors
100
90
80
70
60
T_J = 125 °C
50
40
30
20
T_J = 25 °C
10
0
4.5 5.0 5.5 6.0 6.5 7.0 7.5 8.0 8.5 9.0
V_GE - Gate-to-Emitter Voltage (V)
Fig. 5 - Typical IGBT Transfer Characteristics
5
4.5
I_C = 100 A
4
I_C = 75 A
3.5
3
I_C = 50 A
2.5
2
I_C = 25 A
1.5
1
0 20 40 60 80 100 120 140 160
T_J - Junction Temperature (°C)
Fig. 8 - Typical IGBT Collector to Emitter Voltage vs. Junction
Temperature, V_GE = 15 V
100
10
T_J = 150 °C
1
T_J = 125 °C
0.1
0.01
0.001
T_J = 25 °C
0.0001
0
200 400 600 800 1000 1200
V_CES - Collector-to-Emitter Voltage (V)
Fig. 6 - Typical IGBT Zero Gate Voltage Collector Current
6
5.5
T_J = 25 °C
5
4.5
4
3.5
T_J = 125 °C
3
2.5
2
0.20
0.40
0.60
0.80
1.00
I_C (A)
Fig. 7 - Typical IGBT Threshold Voltage
5
4.5
E_off
4
3.5
3
2.5
2
E_on
1.5
1
0.5
0
10 20 30 40 50 60 70 80 90 100
I_C - Collector Current (A)
Fig. 9 - Typical IGBT Energy Losses vs. I_C
T_J = 125 °C, L = 500 μH, V_CC = 600 V,
R_g = 5 , V_GE = 15 V, Diode used HFA16PB120
1
t_d(off)
t_d(on)
t_f
0.1
t_r
0.01
0
20
40
60
80
I_C - Collector Current (A)
Fig. 10 - Typical IGBT Switching Time vs. I_C
T_J = 125 °C, L = 500 μH, V_CC = 600 V,
R_g = 5 , V_GE = 15 V, Diode used HFA16PB120
Revision: 20-May-16
4
Document Number: 94722
For technical questions within your region: [e-mail], [e-mail], [e-mail]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000