VS-GB90DA120U Datasheet, PDF (1/10 Pages) Vishay Siliconix – NPT Gen 5 IGBT technology

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VS-GB90DA120U
Vishay Semiconductors
Insulated Gate Bipolar Transistor
(Ultrafast IGBT), 90 A
SOT-227
PRODUCT SUMMARY
V_CES
I_C DC
V_CE(on) typical at 75 A, 25 °C
Speed
Package
Circuit
1200 V
90 A at 90 °C
3.3 V
8 kHz to 30 kHz
SOT-227
Single switch diode
FEATURES
• NPT Gen 5 IGBT technology
• Square RBSOA
• HEXFRED^® low Q_rr, low switching energy
• Positive V_CE(on) temperature coefficient
• Fully isolated package
• Very low internal inductance ( 5 nH typical)
• Industry standard outline
• UL approved file E78996
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
BENEFITS
• Designed for increased operating efficiency in power
conversion: UPS, SMPS, welding, induction heating
• Easy to assemble and parallel
• Direct mounting on heatsink
• Plug-in compatible with other SOT-227 packages
• Low EMI, requires less snubbing
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
TEST CONDITIONS
Collector to emitter voltage
Continuous collector current
Pulsed collector current
Clamped inductive load current
Diode continuous forward current
Gate to emitter voltage
Power dissipation, IGBT
Power dissipation, diode
Isolation voltage
V_CES
I_C ⁽¹⁾
I_CM
I_LM
I_F
V_GE
P_D
P_D
V_ISOL
T_C = 25 °C
T_C = 90 °C
T_C = 25 °C
T_C = 90 °C
T_C = 25 °C
T_C = 90 °C
T_C = 25 °C
T_C = 90 °C
Any terminal to case, t = 1 min
Note
(1) _{Maximum collector current admitted is 100 A, to do exceed the maximum temperature of terminals}
MAX.
1200
149
90
200
200
76
46
± 20
862
414
357
171
2500
UNITS
V
A
V
W
V
Revision: 20-May-16
1
Document Number: 94722
For technical questions within your region: [e-mail], [e-mail], [e-mail]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000