VS-GB90DA120U Datasheet, PDF (5/10 Pages) Vishay Siliconix – NPT Gen 5 IGBT technology

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VS-GB90DA120U
Vishay Semiconductors
14
12
E_on
10
8
E_off
6
4
2
0
0
10
20
30
40
50
R_g (Ω)
Fig. 11 - Typical IGBT Energy Loss vs. R_g,
T_J = 125 °C, I_C = 75 A, L = 500 μH,
V_CC = 600 V, V_GE = 15 V, Diode used HFA16PB120
10 000
1000
100
t_d(on)
t_d(off)
t_f
t_r
10
0
10
20
30
40
50
R_G (Ω)
Fig. 12 - Typical IGBT Switching Time vs. R_g
T_J = 125 °C, L = 500 μH, V_CC = 600 V,
R_g = 5 , V_GE = 15 V
300
250
125 °C
V_R = 200 V
I_F = 50 A
200
25 °C
150
100
50
100
1000
dI_F/dt (A/μs)
Fig. 13 - Typical t_rr Diode vs. dI_F/dt
V_RR = 200 V, I_F = 50 A
3000
2500
V_R = 200 V
I_F = 50 A
2000
1500
1000
125 °C
25 °C
500
100
1000
dI_F/dt (A/μs)
Fig. 14 - Stored Charge vs. dI_F/dt of Diode
40
35
V_R = 200 V
I_F = 50 A
30
25
125 °C
20
15
25 °C
10
5
100
1000
dI_F/dt (A/μs)
Fig. 15 - Typical Reverse Recovery Current vs. dI_F/dt of Diode
Revision: 20-May-16
5
Document Number: 94722
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