VS-GB90DA120U Datasheet, PDF (3/10 Pages) Vishay Siliconix – NPT Gen 5 IGBT technology

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VS-GB90DA120U
Vishay Semiconductors
THERMAL AND MECHANICAL SPECIFICATIONS
PARAMETER
SYMBOL
TEST CONDITIONS
Junction and storage temperature range
Junction to case
IGBT
Diode
T_J, T_Stg
R_thJC
Case to heatsink
Weight
R_thCS
Flat, greased surface
Mounting torque
Torque to terminal
Torque to heatsink
Case style
MIN.
-40
-
-
-
-
-
-
SOT-227
TYP.
-
-
-
0.05
30
-
-
MAX.
150
0.145
0.35
-
-
1.1 (9.7)
1.3 (11.5)
UNITS
°C
°C/W
g
Nm (lbf.in)
Nm (lbf.in)
160
140
120
DC
100
80
60
40
20
0
0 20 40 60 80 100 120 140 160
I_C - Continuous Collector Current (A)
Fig. 1 - Maximum DC IGBT Collector Current vs.
Case Temperature
200
V_GE = 15 V
150
T_J = 125 °C
100
T_J = 25 °C
50
T_J = 150 °C
0
0.0 1.0 2.0 3.0 4.0 5.0 6.0 7.0
V_CE - Collector-to-Emitter Voltage (V)
Fig. 2 - Typical Collector to Emitter Current
Output Characteristics of IGBT
160
140
120
100
80
60
40
20
0
0
20
40
60
80
100
I_F - Continuous Forward Current (A)
Fig. 3 - Allowable Forward Current vs. Case Temperature
Diode Leg
160
120
T_J = 150 °C
80
T_J = 125 °C
40
T_J = 25 °C
0
0.0
1.0
2.0
3.0
4.0
5.0
V_FM - Forward Voltage Drop (V)
Fig. 4 - Typical Diode Forward Voltage Drop Characteristics
Revision: 20-May-16
3
Document Number: 94722
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