VS-GB70LA60UF Datasheet, PDF (7/9 Pages) Vishay Siliconix – NPT warp 2 speed IGBT technology with positive temperature coefficient

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VS-GB70LA60UF
Vishay Semiconductors
1
2
3
V_C
90 %
10 %
90 %
t_d(off)
10 %
5%
I_C
t_d(on)
t_r
E_on
t_f
t = 5 µs
E_off
E_ts = (E_on + E_off)
Fig. 19 - Switching Loss Waveforms Test Circuit
ORDERING INFORMATION TABLE
Device code _{VS- G B 70 L A 60 U F}
1
2
3
4
5
6
7
8
9
1
2
3
4
5
6
7
8
9
CIRCUIT CONFIGURATION
- Vishay Semiconductors product
- Insulated Gate Bipolar Transistor (IGBT)
- B = IGBT Generation 5
- Current rating (70 = 70 A)
- Circuit configuration (L = Low Side Chopper)
- Package indicator (A = SOT-227)
- Voltage rating (60 = 600 V)
- Speed/type (U = Ultrafast IGBT)
- F = F/W FRED Pt^® diode
4
3
2
1
Dimensions
Packaging information
LINKS TO RELATED DOCUMENTS
http://www.vishay.com/doc?95036
http://www.vishay.com/doc?95037
Revision: 01-Feb-12
7
Document Number: 93104
For technical questions, contact: [e-mail]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000