VS-GB70LA60UF Datasheet, PDF (3/9 Pages) Vishay Siliconix – NPT warp 2 speed IGBT technology with positive temperature coefficient

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THERMAL AND MECHANICAL SPECIFICATIONS
PARAMETER
SYMBOL
Maximum junction and storage temperature
range
T_J, T_Stg
Thermal resistance, junction to case
IGBT
Diode
R_thJC
Thermal resistance, case to sink per module
Mounting torque, 6-32 or M3 screw
R_thCS
Weight
MIN.
- 40
-
-
-
-
-
VS-GB70LA60UF
Vishay Semiconductors
TYP.
-
-
-
0.05
-
30
MAX.
150
0.28
0.53
-
1.3
-
UNITS
°C
°C/W
Nm
g
160
140
120
100
80
60
40
20
0
0
20
40
60
80 100 120
I_C - Continuous Collector Current (A)
Fig. 1 - Maximum DC IGBT Collector Current vs.
Case Temperature
1000
100
10
1
0.1
0.01
1
10
100
V_CE (V)
Fig. 2 - IGBT Reverse Bias SOA
T_J = 150 °C, V_GE = 15 V
1000
200
175
150
T_J = 25 °C
125
100
T_J = 125 °C
75
50
25
0
0
1
2
3
4
5
V_CE (V)
Fig. 3 - Typical IGBT Collector Current Characteristics
1
0.1
0.01
T_J = 125 °C
0.001
T_J = 25 °C
0.0001
100
200
300
400
500
600
V_CES (V)
Fig. 4 - Typical IGBT Zero Gate Voltage Collector Current
Revision: 01-Feb-12
3
Document Number: 93104
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