VS-GB70LA60UF Datasheet, PDF (4/9 Pages) Vishay Siliconix – NPT warp 2 speed IGBT technology with positive temperature coefficient

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4.5
4.0
T_J = 25 °C
3.5
3.0
T_J = 125 °C
2.5
2.0
0.0002
0.0004
0.0006
0.0008
0.001
I_C (mA)
Fig. 5 - Typical IGBT Threshold Voltage
VS-GB70LA60UF
Vishay Semiconductors
200
175
150
125
100
T_J = 125 °C
75
50
T_J = 25 °C
25
0
0 0.5 1.0 1.5 2.0 2.5 3.0 3.5
V_FM (V)
Fig. 8 - Typical Diode Forward Characteristics
4
1.50
1.25
100 A
3
1.00
70 A
2
35 A
1
10 30 50 70 90 110 130 150
T_J (°C)
Fig. 6 - Typical IGBT Collector to Emitter Voltage vs. Junction
Temperature, V_GE = 15 V
160
140
120
100
80
60
40
20
0
0
20
40
60
80 100 120
I_F - Continuous Forward Current (A)
Fig. 7 - Maximum DC Forward Current vs. Case Temperature
0.75
0.50
0.25
E_off
E_on
0.00
0
20
40
60
80
I_C (A)
Fig. 9 - Typical IGBT Energy Loss vs. I_C
T_J = 125 °C, L = 500 μH, V_CC = 360 V,
R_g = 5 , V_GE = 15 V
1000
100
t_d(off)
t_f
t_r
t_d(on)
10
0 10 20 30 40 50 60 70 80
I_C (A)
Fig. 10 - Typical IGBT Switching Time vs. I_C
T_J = 125 °C, L = 500 μH, V_CC = 360 V,
R_g = 5 , V_GE = 15 V
Revision: 01-Feb-12
4
Document Number: 93104
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