VS-GB70LA60UF Datasheet, PDF (5/9 Pages) Vishay Siliconix – NPT warp 2 speed IGBT technology with positive temperature coefficient

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VS-GB70LA60UF
Vishay Semiconductors
170
145
T_J = 125 °C
120
95
70
T_J = 25 °C
45
20
100
1000
dI_F/dt (A/µs)
Fig. 11 - Typical t_rr Diode vs. dI_F/dt
V_R = 200 V, I_F = 50 A
30
25
20
T_J = 125 °C
15
10
5
T_J = 25 °C
0
100
1000
dI_F/dt (A/µs)
Fig. 12 - Typical I_rr Diode vs. dI_F/dt
V_RR = 200 V, I_F = 50 A
1250
1050
850
T_J = 125 °C
650
450
250
T_J = 25 °C
50
100
1000
dI_F/dt (A/µs)
Fig. 13 - Typical Q_rr Diode vs. dI_F/dt
V_R = 200 V, I_F = 50 A
1
0.1
0.01
DC
D = 0.50
D = 0.20
D = 0.10
D = 0.05
D = 0.02
D = 0.01
0.001
0.00001
0.0001
0.001
0.01
0.1
1
t₁ - Rectangular Pulse Duration (s)
10
100
Fig. 14 - Maximum Thermal Impedance Z_thJC Characteristics (IGBT)
Revision: 01-Feb-12
5
Document Number: 93104
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