VS-GB70LA60UF Datasheet, PDF (6/9 Pages) Vishay Siliconix – NPT warp 2 speed IGBT technology with positive temperature coefficient

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1
VS-GB70LA60UF
Vishay Semiconductors
0.1
DC
0.01
D = 0.50
D = 0.20
D = 0.10
D = 0.05
D = 0.02
D = 0.01
0.001
0.00001
0.0001
0.001
0.01
0.1
1
t₁ - Rectangular Pulse Duration (s)
10
100
Fig. 15 - Maximum Thermal Impedance Z_thJC Characteristics (DIODE)
50 V
1000 V
1
L
V_C *
D.U.T.
2
* Driver same type as D.U.T.; V_C = 80 % of V_ce(max)
* Note: Due to the 50 V power supply, pulse width and inductor
will increase to obtain Id
Fig. 16 - Clamped Inductive Load Test Circuit
R = ^VCC
ICM
D.U.T.
R_g
+
- _VCC
Fig. 17 - Pulsed Collector Current Test Circuit
Diode clamp/
D.U.T.
-+
-5V
R_g
L
D.U.T./
driver
+
-
V_CC
Fig. 18 - Switching Loss Test Circuit
Revision: 01-Feb-12
6
Document Number: 93104
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