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VS-GB70LA60UF Datasheet, PDF (2/9 Pages) Vishay Siliconix – NPT warp 2 speed IGBT technology with positive temperature coefficient
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VS-GB70LA60UF
Vishay Semiconductors
ELECTRICAL SPECIFICATIONS (TJ = 25 °C unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
Collector to emitter breakdown
voltage
VBR(CES)
VGE = 0 V, IC = 1 mA
VGE = 15 V, IC = 35 A
Collector to emitter voltage
VCE(on)
VGE = 15 V, IC = 70 A
VGE = 15 V, IC = 35 A, TJ = 125 °C
VGE = 15 V, IC = 70 A, TJ = 125 °C
Gate threshold voltage
Temperature coefficient of
threshold voltage
VGE(th)
VCE = VGE, IC = 500 μA
VGE(th)/TJ VCE = VGE, IC = 1 mA (25 °C to 125 °C)
Collector to emitter leakage current
VGE = 0 V, VCE = 600 V
ICES
VGE = 0 V, VCE = 600 V, TJ = 125 °C
Diode reverse breakdown voltage
VBR
IR = 1 mA
IC = 35 A, VGE = 0 V
Diode forward voltage drop
VFM
IC = 70 A, VGE = 0 V
IC = 35 A, VGE = 0 V, TJ = 125 °C
IC = 70 A, VGE = 0 V, TJ = 125 °C
Diode reverse leakage current
IRM
VR = VR rated
TJ = 125 °C, VR = VR rated
Gate to emitter leakage current
IGES
VGE = ± 20 V
MIN.
600
-
-
-
-
3
-
-
-
600
-
-
-
-
-
-
-
TYP.
-
1.69
2.23
2.07
2.89
3.9
-9
1
0.07
-
1.8
2.13
1.35
1.7
0.1
0.01
-
MAX.
-
1.88
2.44
2.31
3.21
5
-
100
2.0
-
2.33
2.71
1.81
2.32
50
3
± 200
UNITS
V
mV/°C
μA
mA
V
V
μA
mA
nA
SWITCHING CHARACTERISTICS (TJ = 25 °C unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
Total gate charge (turn-on)
Gate to emitter charge (turn-on)
Qg
Qge
IC = 50 A, VCC = 400 V, VGE = 15 V
Gate to collector charge (turn-on)
Qgc
Turn-on switching loss
Turn-off switching loss
Total switching loss
Eon
IC = 70 A, VCC = 360 V,
Eoff
VGE = 15 V, Rg = 5 
Etot
L = 500 μH, TJ = 25 °C
Turn-on switching loss
Turn-off switching loss
Total switching loss
Turn-on delay time
Rise time
Eon
Eoff
Etot
td(on)
tr
IC = 70 A, VCC = 360 V,
VGE = 15 V, Rg = 5 
L = 500 μH, TJ = 125 °C
Energy losses
include tail and
diode recovery
(see fig. 18)
Turn-off delay time
Fall time
Reverse bias safe operating area
Diode reverse recovery time
td(off)
tf
RBSOA
trr
TJ = 150 °C, IC = 120 A, Rg = 22 
VGE = 15 V to 0 V, VCC = 400 V,
VP = 600 V
Diode peak reverse current
Irr
IF = 50 A, dIF/dt = 200 A/μs, VR = 200 V
Diode recovery charge
Diode reverse recovery time
Diode peak reverse current
Diode recovery charge
Qrr
trr
Irr
IF = 50 A, dIF/dt = 200 A/μs,
VR = 200 V, TJ = 125 °C
Qrr
MIN.
-
-
-
-
-
-
-
-
-
-
-
-
-
TYP.
320
42
110
1.15
1.16
2.31
1.27
1.28
2.55
208
69
208
100
MAX.
-
-
-
-
-
-
-
-
-
-
-
-
-
Fullsquare
-
59
93
-
4
6
-
118
279
-
130
159
-
11
13
-
715
995
UNITS
nC
mJ
ns
ns
A
nC
ns
A
nC
Revision: 01-Feb-12
2
Document Number: 93104
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