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VS-GB200TS60NPBF Datasheet, PDF (7/9 Pages) Vishay Siliconix – Ultrafast: optimized for hard switching speed
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ORDERING INFORMATION TABLE
VS-GB200TS60NPbF
Vishay Semiconductors
Device code VS- G B 200 T S 60 N PbF
1
2
3
4
5
6
7
8
9
1 - Vishay Semiconductors product
2 - Insulated Gate Bipolar Transistor (IGBT)
3 - B = IGBT Generation 5 NPT
4 - Current rating (200 = 200 A)
5 - Circuit configuration (T = Half-bridge)
6 - Package indicator (S = INT-A-PAK)
7 - Voltage rating (60 = 600 V)
8 - Speed/type (N = Ultrafast IGBT)
9 - Lead (Pb)-free
CIRCUIT CONFIGURATION
3
6
7
1
Dimensions
4
5
2
LINKS TO RELATED DOCUMENTS
www.vishay.com/doc?95543
Revision: 10-Jun-15
7
Document Number: 94503
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000