 English |
|
|
|
|
|
|
|
| VS-GB200TS60NPBF Datasheet, PDF (2/9 Pages) Vishay Siliconix – Ultrafast: optimized for hard switching speed | |||
| |||
| ◁ |
www.vishay.com
VS-GB200TS60NPbF
Vishay Semiconductors
ELECTRICAL SPECIFICATIONS (TJ = 25 °C unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
Collector to emitter breakdown voltage VBR(CES)
Collector to emitter voltage
VCE(on)
Gate threshold voltage
VGE(th)
VGE = 0 V, IC = 500 μA
VGE = 15 V, IC = 100 A
VGE = 15 V, IC = 200 A
VGE = 15 V, IC = 100 A, TJ = 125 °C
VGE = 15 V, IC = 200 A, TJ = 125 °C
VCE = VGE, IC = 500 μA
Collector to emitter leakage current
VGE = 0 V, VCE = 600 V
ICES
VGE = 0 V, VCE = 600 V, TJ = 150 °C
IC = 100 A
Diode forward voltage drop
IC = 200 A
VFM
IC = 100 A, TJ = 125 °C
IC = 200 A, TJ = 125 °C
Gate to emitter leakage current
IGES
VGE = ± 20 V
MIN.
600
-
-
-
-
3
-
-
-
-
-
-
-
TYP.
-
1.95
2.6
2.28
3.14
4.2
0.005
0.01
1.39
1.64
1.32
1.67
-
MAX.
-
2.1
2.84
2.5
3.48
6
0.2
15
1.78
2.2
1.69
2.30
± 200
UNITS
V
mA
V
nA
SWITCHING CHARACTERISTICS (TJ = 25 °C unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN.
Turn-on switching loss
Turn-off switching loss
Total switching loss
Turn-on switching loss
Turn-off switching loss
Total switching loss
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Reverse bias safe operating area
Short circuit safe operating area
Diode reverse recovery time
Diode peak reverse current
Diode recovery charge
Diode reverse recovery time
Diode peak reverse current
Diode recovery charge
Eon
-
Eoff
IC = 200 A, VCC = 360 V, VGE = 15 V,ï
Rg = 10 ïï¬ L = 200 μH, TJ = 25 °C
-
Etot
-
Eon
-
Eoff
-
Etot
-
td(on)
IC = 200 A, VCC = 360 V, VGE = 15 V,ï
Rg = 10 ïï¬ L = 200 μH, TJ = 125 °C
-
tr
-
td(off)
-
tf
-
RBSOA
TJ = 150 °C, IC = 400 A,ï
Rg = 27 ïï¬ï VGE = 15 V to 0
SCSOA
TJ = 150 °C, VCC = 400 V, VP = 600 V,ï
Rg = 27 ïï¬ï VGE = 15 V to 0
10
trr
-
Irr
IF = 50 A, dIF/dt = 200 A/μs,ï
VCC = 400 V, TJ = 25 °C
-
Qrr
-
trr
-
Irr
IF = 50 A, dIF/dt = 200 A/μs,ï
VCC = 400 V, TJ = 125 °C
-
Qrr
-
TYP.
3.65
6.9
10.55
3.8
7.8
11.6
507
133
538
92
Fullsquare
-
226
17
1900
290
25
3600
MAX.
-
-
-
-
-
-
-
-
-
-
-
260
20
2600
330
30
5000
UNITS
mJ
ns
ns
A
nC
ns
A
nC
Revision: 10-Jun-15
2
Document Number: 94503
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
|
▷ |
German
Russian
Spanish
Italian
Polish
Chinese
Japanese
Korean
French
Portuguese