VS-GB200TS60NPBF Datasheet, PDF (4/9 Pages) Vishay Siliconix – Ultrafast: optimized for hard switching speed

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VS-GB200TS60NPbF
Vishay Semiconductors
200
1000
td(off)
150
100
50
Tj = 125°C
Tj = 25°C
0
0.0
0.5
1.0
1.5
2.0
V_F (V)
Fig. 5 - Diode Forward Characteristics,
t_p = 500 μs
td(on)
tf
100
tr
10
40 60 80 100 120 140 160 180 200 220
I_C (A)
Fig. 8 - Typical Switching Time vs. I_C
T_J = 125 °C, L = 200 μH, V_CC = 360 V,
R_g = 10 , V_GE = 15 V
160
140
120
100
80
DC
60
40
20
0
0
50 100 150 200 250
Maximum DC Collector Current (A)
Fig. 6 - Maximum Collector Current vs.
Case Temperature
8.0
7.0
6.0
5.0
Eoff
4.0
3.0
2.0
Eon
1.0
0
50
100
150
200
I_C (A)
Fig. 7 - Typical Energy Loss vs. I_C
T_J = 125 °C, L = 200 μH, V_CC = 360 V,
R_g = 10 , V_GE = 15 V
13.0
12.0
11.0
10.0
Eoff
9.0
8.0
Eon
7.0
6.0
5.0
4.0
3.0
5
10 15 20 25 30 35 40 45 50
R_g (Ω)
Fig. 9 - Typical Energy Loss vs. R_g
T_J = 125 °C, L = 200 μH, V_CC = 360 V,
I_CE = 200 A, V_GE = 15 V
10000
1000
td(off)
td(on)
tr
100
tf
10
0
10
20
30
40
50
R_G (Ω)
Fig. 10 - Typical Switching Time vs. R_g
T_J = 125 °C, L = 200 μH, V_CC = 360 V,
I_CE = 200 A, V_GE = 15 V
Revision: 10-Jun-15
4
Document Number: 94503
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