VS-GB200TS60NPBF Datasheet, PDF (1/9 Pages) Vishay Siliconix – Ultrafast: optimized for hard switching speed

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VS-GB200TS60NPbF
Vishay Semiconductors
INT-A-PAK “Half Bridge”
(Ultrafast Speed IGBT), 209 A
INT-A-PAK
PRODUCT SUMMARY
V_CES
I_C DC
V_CE(on) at 200 A, 25 °C
Speed
600 V
209 A
2.6 V
8 kHz to 30 kHz
Package
INT-A-PAK
Circuit
Half bridge with SMD gate resistor
FEATURES
• Generation 5 Non Punch Through (NPT)
technology
• Ultrafast: optimized for hard switching speed
• Low V_CE(on)
• 10 μs short circuit capability
• Square RBSOA
• Positive V_CE(on) temperature coefficient
• HEXFRED^® antiparallel diode with ultrasoft reverse
recovery characteristics
• Industry standard package
• Al₂O₃ DBC
• UL approved file E78996
• Designed for industrial level
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
BENEFITS
• Benchmark efficiency for UPS and welding application
• Rugged transient performance
• Direct mounting on heatsink
• Very low junction to case thermal resistance
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
Collector to emitter voltage
V_CES
Continuous collector current
I_C
Pulsed collector current
I_CM
Clamped inductive load current
I_LM
Diode continuous forward current
I_F
Gate to emitter voltage
V_GE
Maximum power dissipation
P_D
Isolation voltage
Operating junction temperature range
V_ISOL
T_J
TEST CONDITIONS
T_C = 25 °C
T_C = 80 °C
T_C = 25 °C
T_C = 80 °C
T_C = 25 °C
T_C = 80 °C
Any terminal to case, t = 1 min
MAX.
600
209
142
400
400
178
121
± 20
781
438
2500
-40 to +150
UNITS
V
A
V
W
V
°C
Revision: 10-Jun-15
1
Document Number: 94503
For technical questions within your region: [e-mail], [e-mail], [e-mail]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000