VS-GB200TS60NPBF Datasheet, PDF (5/9 Pages) Vishay Siliconix – Ultrafast: optimized for hard switching speed

www.vishay.com
VS-GB200TS60NPbF
Vishay Semiconductors
100
90
10 ohm
80
70
27 ohm
60
50
47 ohm
40
30
20
40
80
120
160
200
I_F (A)
Fig. 11 - Typical Diode I_rr vs. I_F
T_J = 125 °C
26
25
24
23
22
21
20
19
18
17
16
15
14
13
12
11
5
10 15 20 25 30 35 40 45 50
R_G (Ω)
Fig. 14 - Typical Switching Losses vs. Gate Resistance
T_J = 125 °C, L = 200 μH, R_g = 10 ,
V_CC = 360 V, V_GE = 15 V
100
90
80
70
60
50
40
30
0
10
20
30
40
50
R_G (Ω)
Fig. 12 - Typical Diode I_rr vs. R_g
T_J = 125 °C, I_F = 200 A
100
90
80
70
60
50
600 700 800 900 1000 1100 1200 1300
dI_F / dt (A/μs)
Fig. 13 - Typical Diode I_rr vs. dI_F/dt
T_J = 125 °C, V_CC = 360 V, I_F = 200 A, V_GE = 15 V
100
Ic = 200A
10
Ic = 100A
Ic = 50A
1
0
25
50
75
100 125
T_J - Junction Temperature (°C)
Fig. 15 - Typical Switching Losses vs.
Junction Temperature;
L = 200 μH, R_g = 10 , V_CC = 360 V, V_GE = 15 V
12
11
10
9
8
7
6
5
4
3
2
40 60 80 100 120 140 160 180 200 220
I_C (A)
Fig. 16 - Typical Switching Losses vs.
Collector to Emitter Current;
T_J = 125 °C,R_g1 = 10 , R_g2 = 0 , V_CC = 360 V, V_GE = 15 V
Revision: 10-Jun-15
5
Document Number: 94503
For technical questions within your region: [e-mail], [e-mail], [e-mail]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000