VS-GB200TS60NPBF Datasheet, PDF (3/9 Pages) Vishay Siliconix – Ultrafast: optimized for hard switching speed

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THERMAL AND MECHANICAL SPECIFICATIONS
PARAMETER
SYMBOL
Operating junction and storage temperature range
Junction to case per leg
IGBT
Diode
T_J, T_Stg
R_thJC
Case to sink per module
Mounting torque
case to heatsink
case to terminal 1, 2, 3
R_thCS
Weight
MIN.
-40
-
-
-
-
-
-
VS-GB200TS60NPbF
Vishay Semiconductors
TYP.
-
0.13
0.19
0.1
-
-
185
MAX.
150
0.16
0.32
-
4
3
-
UNITS
°C
°C/W
Nm
g
300
Vge = 18V
250 Vge = 15V
Vge = 12V
200
150
Vge = 9V
100
50
0
0
1
2
3
4
V_CE (V)
Fig. 1 - Typical IGBT Output Characteristics
T_J = 25 °C, t_p = 500 μs
300
Vge = 18V
250 ^{Vge = 15V}
Vge = 12V
200
150
Vge = 9V
100
50
0
0
1
2
3
4
5
V_CE (V)
Fig. 2 - Typical IGBT Output Characteristics
T_J = 125 °C, t_p = 500 μs
300
250
200
150
100
Tj = 125°C
50
Tj = 25°C
0
0123456789
V_GE (V)
Fig. 3 - Typical Transfer Characteristics
V_CE = 20 V, t_p = 500 μs
3.5
Ic = 200A
3
2.5
Ic = 100A
2
Ic = 50A
1.5
1
0
40
80
120
160
T_J, Junction Temperature (°C)
Fig. 4 - Typical Collector to Emitter Voltage vs.
Junction Temperature
Revision: 10-Jun-15
3
Document Number: 94503
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